Diffusion Coefficients of Point Defects in Oxides

Solutions of diffusion equation for point defects

An analytical solution of the equation describing diffusion of intrinsic point defects in semiconductor crystals has been obtained for a one-dimensional finite-length domain with the Robin-type boundary conditions. The distributions of point defects for different migration lengths of defects have been calculated. The exact analytical solution was used to verify the approximate numerical solutio...

Computing Diffusion Coefficients of Intrinsic Point Defects in Crystalline Silicon

The quality of crystalline silicon highly influences the quality of semiconductor devices fabricated with it. Grown-in defects, such as octahedral voids or networks of large dislocation loops can be detrimental to the functionality of devices. Both type of defects result from the interaction of intrinsic point defects, vacancies and self-interstitials during growth and subsequent annealing of t...

solutions of diffusion equation for point defects

an analytical solution of the equation describing diffusion of intrinsic point defects in semiconductor crystals has been obtained for a one-dimensional finite-length domain with the robin-type boundary conditions. the distributions of point defects for different migration lengths of defects have been calculated. the exact analytical solution was used to verify the approximate numerical solutio...

Diffusion in Oxides

Point defects and transport mechanisms in transparent conducting oxides of intermediate conductivity

The layered delafossite structure p-type transparent conducting oxides (TCOs) and the mayenite cage-structure n-type transparent conducting oxides represent enabling materials for novel technological applications. In the present work, isovalent replacement of the delafossite B-site cation (i.e., B=Sc and Y for Al in CuBO2) and isovalent substitution of the mayenite Ca-cations by Mg in C12A7 (12...